| PART |
Description |
Maker |
| 2SJ607-Z 2SJ607-ZJ 2SJ607-S |
Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,TO-262,TO-263
MOS FIELD EFFECT TRANSISTOR MOS场效应管
|
NEC, Corp.
NEC Corp.
|
| RSR015P06FRA |
Pch -60V -1.5A Small Signal MOSFET
|
Rohm
|
| FDP20AN06A0 FDB20AN06A0 FDB20AN06A0NL FDP20AN06A0N |
60V N-Channel PowerTrench MOSFET 60V, 45A 20mohm 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 60V, 45A, 20m
N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohm
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
From old datasheet system
N-Channel PowerTrench㈢ MOSFET 60V, 45A, 20mз
N-Channel PowerTrench? MOSFET 60V, 45A, 20m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRCZ44 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Hexfet? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)
|
IRF[International Rectifier]
|
| 2SJ606-ZJ 2SJ606-S |
Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact
MOS FIELD EFFECT TRANSISTOR
Pch power MOSFET 60V Ron=15m ohm MAX. TO-220AB,TO-262,TO-263
|
NEC Corp.
|
| IRFZ44E IRFZ44EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
|
IRF[International Rectifier]
|
| IRFP064V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?
|
Power MOSFET
International Rectifier
|
| IRFP064 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
|
IRF[International Rectifier]
Power MOSFET
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF7642 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 36A条（丁）|63AB
N-Channel NexFET Power MOSFET 8-SON -55 to 150
33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HUF76439P3 HUF76439S3S HUF76439S3ST |
71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 75 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Dual Differential Drivers and Receivers With /-15-kV IEC ESD Protection 16-TSSOP -40 to 85 75 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
71A, 60V, 0.014Ohm, N-Channel, Logic Lvl UltraFET Power MOSFET
71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
|
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
|
